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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4151 DESCRIPTION With ITO-220 package Switching power transistor Low saturation voltage PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (ITO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg Collector-base voltage Collector-emitter voltage PARAMETER CONDITIONS Open emitter Open base Emitter-base voltage INC Collector current Collector current-Peak ES ANG H Open collector CON EMI DUC VALUE 60 TOR 40 7 15 30 2 3 UNIT V V V A A A A W ae ae Base current Base current-Peak Total power dissipation TC=25ae 30 150 -55~150 Junction temperature Storage temperature THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 4.16 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4151 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current At rated volatge ICEO IEBO hFE fT Collector cut-off current Emitter cut-off current DC current gain Transition frequency At rated volatge IC=7.5A ; VCE=2V IC=1.5A ; VCE=10V 70 0.1 mA 0.1 mA CONDITIONS IC=0.1A ;IB=0 IC=7.5A; IB=0.4A IC=7.5A; IB=0.4A MIN 40 0.3 1.2 TYP. MAX UNIT V V V SYMBOL VCEO(SUS) VCEsat VBEsat ICBO Switching times ton ts tf Fall time Turn-on time Storage time CHA IN E SEM NG IC=7.5A;IB1=0.75A IB2=0.75A ,RL=4| VBB2=4V OND IC TOR UC 50 0.3 1.5 0.5 MHz |I |I |I s s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4151 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.20 mm) 3 |
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